Silicon concentration dependence of optical polarization in AlGaN epitaxial layers

Applied Physics Letters

Volumn 98, Issue 2, 2011, Pages

  Murotani, Hideaki ^a   Yamada, Yoichi ^a   Miyake, Hideto ^b   Hiramatsu, Kazumasa ^b  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; ALGAN; BAND EDGE; HEAVY-HOLE BANDS; HOLE BANDS; IN-PLANE COMPRESSIVE STRAIN; OPTICAL POLARIZATION; POLARIZATION COMPONENTS; SI CONCENTRATION; SI-DOPING; SILICON CONCENTRATION;

ALUMINUM; DOPING (ADDITIVES); EPITAXIAL GROWTH; GALLIUM; LIGHT POLARIZATION; PHOTOLUMINESCENCE SPECTROSCOPY; POLARIZATION; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78751503388     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3543631     Document Type: Article

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