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Volumn 40, Issue 2, 2009, Pages 293-295

The influence of growth temperature and precursors' doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique

(10) Krajewski, T a Guziewicz, E a Godlewski, M a,b Wachnicki, L a,b Kowalik, I A a Wojcik Glodowska, A a Lukasiewicz, M b Kopalko, K a Osinniy, V a Guziewicz, M c

a INSTITUTE OF PHYSICS (Poland)

b CARDINAL STEFAN WYSZY SKI UNIVERSITY (Poland)

c Department of Micro and Nanotechnology of Wide Bandgap Semiconductors (Poland)

Author keywords

Atomic layer deposition; Free carrier concentration; Hall mobility; Zinc oxide

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMS; BIOACTIVITY; CARRIER CONCENTRATION; CARRIER MOBILITY; CIVIL AVIATION; DEIONIZED WATER; GALVANOMAGNETIC EFFECTS; GROWTH (MATERIALS); GROWTH TEMPERATURE; HALL EFFECT; HALL MOBILITY; OXIDE FILMS; OXIDES; OXYGEN; THIN FILMS; ZINC; ZINC OXIDE;

ELECTRON CONCENTRATIONS; FREE CARRIER CONCENTRATION; LAYER DEPOSITION; OXIDE LAYERS; OXYGEN PRECURSORS; ROOM-TEMPERATURE (RT); TEMPERATURE GROWTH; ZNO THIN FILMS;

MAGNETIC FIELD EFFECTS;

EID: 58749105817 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/j.mejo.2008.07.053 Document Type: Article

Times cited : (50)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.