Electronic states at the interface between indium tin oxide and silicon

Journal of Applied Physics

Volumn 110, Issue 7, 2011, Pages

  Malmbekk, H ^a   Vines, L ^a   Monakhov, E V ^a   Svensson, B G ^a  

^a UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

BROAD BANDS; CAPACITANCE VOLTAGE; CONDUCTION BAND EDGE; CURRENT VOLTAGE; DC MAGNETRON SPUTTERING; ELECTRONIC ENERGY LEVELS; INDIUM TIN OXIDE; INTERFACIAL STATE; ITO FILMS; P-TYPE; P-TYPE SI; RECTIFYING BEHAVIORS; ROOM TEMPERATURE; VALENCE BAND EDGES;

DISTILLATION; ELECTRIC RECTIFIERS; ELECTRON MOBILITY; ELECTRON TRAPS; ELECTRONIC PROPERTIES; ELECTRONIC STATES; HOLE TRAPS; INDIUM; INDIUM COMPOUNDS; MONOCRYSTALLINE SILICON; POINT DEFECTS; POWER QUALITY; THERMODYNAMIC STABILITY; TIN; TIN OXIDES;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 80054981899     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3643002     Document Type: Article

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