Boron distribution in the core of Si nanowire grown by chemical vapor deposition

Journal of Applied Physics

Volumn 111, Issue 9, 2012, Pages

  Chen, Wanghua ^a   Dubrovskii, Vladimir G ^b,c   Liu, Xiaolong ^b,d   Xu, Tao ^e   Lardé, Rodrigue ^a   Philippe Nys, Jean ^e   Grandidier, Bruno ^e   Stiévenard, Didier ^e   Patriarche, Gilles ^f   Pareige, Philippe ^a  

^a UNIVERSITÉ ET INSA DE ROUEN   (France)

^b ST PETERSBURG ACADEMIC UNIVERSITY   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^e INSTITUT D ELECTRONIQUE   (France)

^f CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; BORON ATOM; BORON DISTRIBUTION; DIFFUSION LENGTH; DOPANT DISTRIBUTION; EXPERIMENTAL DATA; KINETIC PATHWAY; LASER-ASSISTED; RADIAL DISTRIBUTIONS; SI NANOWIRE; SILANE PARTIAL PRESSURE; SPATIAL IN-HOMOGENEITY; THEORETICAL MODELS;

CHEMICAL VAPOR DEPOSITION; DIFFUSION; DOPING (ADDITIVES); FLUIDIZED BEDS; SILICON; VAPORS;

NANOWIRES;

EID: 84864186982     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4714364     Document Type: Article

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