Study of the effect of gas pressure and catalyst droplets number density on silicon nanowires growth, tapering, and gold coverage

Journal of Applied Physics

Volumn 107, Issue 8, 2010, Pages

  Chen, W H ^a   Larde R ^a   Cadel, E ^a   Xu, T ^b   Grandidier, B ^b   Nys, J P ^b   Stivenard D ^b   Pareige, P ^a  

^a UNIVERSITÉ ET INSA DE ROUEN   (France)

^b Institut Superieur de l'Electronique et du Numerique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DROPLETS NUMBER; GAS PRESSURES; GOLD ATOMS; MBE GROWTH; NUMBER DENSITY; PRECURSOR PARTIAL PRESSURE; SI ATOMS; SILANE PARTIAL PRESSURE; SILICON NANOWIRES;

CATALYSTS; CHEMICAL BEAM EPITAXY; CRYSTAL GROWTH; DROP FORMATION; GOLD COATINGS; GOLD DEPOSITS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; PRESSURE EFFECTS;

CHEMICAL VAPOR DEPOSITION;

EID: 77952362633     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3359648     Document Type: Article

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