NH3 molecular doping of silicon nanowires grown along the [112], [110], [001], and [111] orientations

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Miranda, Álvaro ^a,c   Cartoixà, Xavier ^b   Canadell, Enric ^a   Rurali, Riccardo ^a  

^a INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

Author keywords

Ammonia; DFT; Electronic properties; Gas sensing; Molecular doping; Silicon nanowires

Indexed keywords

AMMONIA; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; NANOWIRES; QUANTUM THEORY; SILICON; SUBSTITUTION REACTIONS;

ADSORBED MOLECULES; ELECTRONIC STRUCTURE CALCULATIONS; GAS SENSING; GROWTH ORIENTATIONS; MOLECULAR DONORS; MOLECULAR DOPING; SILICON NANOWIRES; SUBSTITUTIONAL IMPURITIES;

SILICON COMPOUNDS;

EID: 84864020424     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-308     Document Type: Article

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