The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process

Nanoscale Research Letters

Volumn 5, Issue 10, 2010, Pages 1654-1657

  Jang, Moongyu ^a   Park, Youngsam ^a   Jun, Myungsim ^a   Hyun, Younghoon ^a   Choi, Sung Jin ^b   Zyung, Taehyoung ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Nanowire; Seebeck coefficient; Silicon; Thermoelectric effect

Indexed keywords

CMOS COMPATIBLE; COMPATIBLE PROCESS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; ELECTRICAL CONDUCTIVITY; POWER FACTORS; ROOM TEMPERATURE; SEEBECK; SILICON NANOWIRES; THERMOELECTRIC EFFECTS;

ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; NANOWIRES; SEEBECK COEFFICIENT; SEMICONDUCTING SILICON;

ELECTRIC WIRE;

EID: 77958457894     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-010-9690-2     Document Type: Article

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