A nanostructured porous silicon near insulator becomes either a p- or an n-type semiconductor upon gas adsorption

Advanced Materials

Volumn 17, Issue 5, 2005, Pages 528-531

  Garrone, Edoardo ^a   Geobaldo, Francesco ^a   Rivolo, Paola ^a   Amato, Giampiero ^b   Boarino, Luca ^b   Chiesa, Mario ^c   Giamello, Elio ^c   Gobetto, Roberto ^c   Ugliengo, Piero ^c   Viale, Alessandra ^c  

^a POLITECNICO DI TORINO   (Italy)

^b Ist Elettrotecn Naz Galileo F   (Italy)

^c UNIVERSITY OF TURIN   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CARBON NANOTUBES; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATORS; GAS ADSORPTION; HYDROGEN; NANOSTRUCTURED MATERIALS; NATURAL FREQUENCIES; NITROGEN OXIDES; PARAMAGNETIC RESONANCE;

ELECTROCHEMICAL ETCHING; ELECTRON-DONORS; FREE CARRIERS; SEMICONDUCTOR OXIDES;

POROUS SILICON;

EID: 20144388601     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200401200     Document Type: Article

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