Control of growth mechanisms and orientation in epitaxial Si nanowires grown by electron beam evaporation

Nanotechnology

Volumn 20, Issue 13, 2009, Pages

  Irrera, A ^a   Pecora, E F ^a   Priolo, F ^b  

^a CNR   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC ORDERINGS; AXIAL GROWTHS; CRYSTALLOGRAPHIC ORIENTATIONS; ELECTRON BEAM EVAPORATIONS; EPITAXIAL SI; EXPERIMENTAL CONDITIONS; EXPERIMENTAL PARAMETERS; GROWTH MECHANISMS; MICROSCOPIC GROWTHS; PLANAR LAYERS; SI ATOMS; STRONG ORIENTATIONS;

ATOMS; ELECTRIC WIRE; ELECTRON BEAMS; EVAPORATION; NANOWIRES; PARAMETER ESTIMATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOIL CONSERVATION; VAPORS;

EPITAXIAL GROWTH;

GOLD; NANOWIRE; SILICON;

ADSORPTION; ARTICLE; CRYSTALLOGRAPHY; ELECTRON BEAM; EVAPORATION; GROWTH RATE; MICROSCOPY; PARAMETER; PRIORITY JOURNAL;

EID: 65549165142     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/13/135601     Document Type: Article

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