SCOPUS 정보 검색 플랫폼

Nanoscale

Volumn 4, Issue 15, 2012, Pages 4382-4392

Nanoscale phase change memory materials

(4) Caldwell, Marissa A a Jeyasingh, Rakesh Gnana David b Wong, H S Philip b Milliron, Delia J c

a STANFORD UNIVERSITY (United States)

b Stanford University (United States)

c LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; NANOTECHNOLOGY; PHASE CHANGE MEMORY;

AMORPHOUS STATE; MEMORY TECHNOLOGY; METAL CHALCOGENIDE; NANO SCALE; NANOSCALE DIMENSIONS; PHASE CHANGE; PHASE TRANSITION PROPERTIES; REVERSIBLE TRANSITIONS; SWITCHING DEVICES; SYNTHETIC STRATEGIES;

NANOSTRUCTURED MATERIALS;

EID: 84863923400 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c2nr30541k Document Type: Article

Times cited : (60)

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