First demonstration of phase change memory device using solution processed GeTe nanoparticles

European Solid-State Device Research Conference

Volumn , Issue , 2011, Pages 99-102

  Jeyasingh, Rakesh G D ^a   Caldwell, Marissa A ^b   Milliron, Delia J ^c   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CYCLING ENDURANCE; PHASE CHANGE; SOLUTION-PROCESSED; THRESHOLD SWITCHING;

EQUIPMENT; NANOPARTICLES;

PHASE CHANGE MEMORY;

EID: 82955225076     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2011.6044225     Document Type: Conference Paper

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