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Volumn 64, Issue 24, 2010, Pages 2728-2730
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Sb2Te3-Ta2O5 nano-composite films for low-power phase-change memory application
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Author keywords
Composite materials; Electrical properties; Nanocomposites; Thin films
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Indexed keywords
COSPUTTERING;
ELECTRICAL PROPERTY;
LOW POWER;
NANOCOMPOSITE FILM;
PCRAM CELLS;
PHASE-CHANGE RANDOM ACCESS MEMORY;
PULSE WIDTH;
RADIO-FREQUENCY MAGNETRON SPUTTERING SYSTEM;
RESET VOLTAGE;
ROOM TEMPERATURE;
BALL MILLING;
ELECTRIC PROPERTIES;
GERMANIUM;
MATERIALS PROPERTIES;
NANOCOMPOSITES;
PHASE CHANGE MEMORY;
RANDOM ACCESS STORAGE;
TANTALUM;
TELLURIUM COMPOUNDS;
THIN FILMS;
COMPOSITE FILMS;
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EID: 77957197300
PISSN: 0167577X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.matlet.2010.09.005 Document Type: Article |
Times cited : (14)
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References (14)
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