Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency

Optics Express

Volumn 19, Issue 4, 2011, Pages 3637-3646

  Kang, Ji Hye ^a   Ryu, Jae Hyoung ^a   Kim, Hyun Kyu ^a   Kim, Hee Yun ^a   Han, Nam ^a   Park, Young Jae ^a   Uthirakumar, Periyayya ^a   Hong, Chang Hee ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTORS; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOSPHERES; OHMIC CONTACTS; WET ETCHING;

DOUBLE LAYERS; ETCH MASK; GAN LAYERS; INGAN LED; INJECTED CURRENT; LIGHT-EXTRACTION EFFICIENCY; P-TYPE GAN; SIMULATED DATA; SINGLE LAYER; SURFACE-TEXTURING; WALLPLUG EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 79951596582     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.003637     Document Type: Article

References (12)

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