Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells

Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

  Liuolia, Vytautas ^a   Marcinkevičius, Saulius ^a   Lin, You Da ^b   Ohta, Hiroaki ^b   Denbaars, Steven P ^b   Nakamura, Shuji ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC TIME; EXCITON DIFFUSION LENGTH; EXCITON TRANSFER; INGAN QUANTUM WELLS; INGAN/GAN QUANTUM WELL; LINEAR POLARIZATION; LOCALIZATION CENTERS; LOCALIZED EXCITON; M-PLANE; NON-RADIATIVE RECOMBINATIONS; POLARIZED PHOTOLUMINESCENCE; RECOMBINATION CENTERS; ROOM TEMPERATURE; SPECTRAL SHIFT; TIME-DEPENDENT; TIME-RESOLVED PHOTOLUMINESCENCE;

EXCITONS; PHOTOLUMINESCENCE; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77955822740     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3460278     Document Type: Article

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