On the RF properties of weakly saturated SiGe HBTs and their potential use in ultralow-voltage circuits

IEEE Electron Device Letters

Volumn 32, Issue 1, 2011, Pages 3-5

  Seth, Sachin ^a   Najafizadeh, Laleh ^b   Cressler, John D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL INSTITUTES OF HEALTH   (United States)

Author keywords

Biomedical telemetry; heterojunction bipolar transistors (HBTs); low voltage operation; RF circuit design; SiGe HBTs; silicongermanium (SiGe)

Indexed keywords

BIOMEDICAL TELEMETRY; LOW VOLTAGE OPERATION; RF CIRCUIT DESIGN; SIGE HBTS; SILICON GERMANIUM;

AMPLIFIERS (ELECTRONIC); BIPOLAR TRANSISTORS; DC POWER TRANSMISSION; DESIGN; HETEROJUNCTIONS; INTEGRATED CIRCUIT MANUFACTURE; SILICON ALLOYS; TELEMETERING EQUIPMENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 78650909046     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2087313     Document Type: Conference Paper

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