Oxygen-induced physical property variation of deposited ZnO films by metal-organic chemical vapor deposition

Applied Surface Science

Volumn 258, Issue 22, 2012, Pages 8673-8677

  Shi, Zhifeng ^a   Zhang, Shikai ^a   Wu, Bin ^a   Cai, Xupu ^a   Zhang, Jinxiang ^a   Yin, Wei ^a   Wang, Hui ^a   Wang, Jin ^a   Xia, Xiaochuan ^b   Dong, Xin ^a   Zhang, Baolin ^a   Du, Guotong ^a,b  

^a JILIN UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Deep level emission; Oxygen flow rate; Oxygen vacancy; ZnO

Indexed keywords

CHEMICAL BONDS; FLOW RATE; II-VI SEMICONDUCTORS; INDUSTRIAL CHEMICALS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOLUMINESCENCE; PHYSICAL PROPERTIES; SILICON COMPOUNDS; THIN FILMS; VACANCIES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE; ZNO NANOPARTICLES;

BOND FORMATION; DEEP LEVEL EMISSION; HIGH QUALITY; METAL ORGANIC; OXYGEN FLOW RATES; PHOTOLUMINESCENCE SPECTRUM; ZINC VACANCY; ZNO THIN FILM;

OXYGEN VACANCIES;

EID: 84863517754     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.05.072     Document Type: Article

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