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Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 12, 2009, Pages 1214-1218

N-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates

(9) Choi, Mi Kyung a Han, Won Suk a Kim, Young Yi a Kong, Bo Hyun a Cho, Hyung Koun a Kim, Jae Hyun b Seo, Hong Seok b Kim, Kang Pil b Lee, Jung Ho c

a Sungkyunkwan University (South Korea)

b Daegu Gyeongbuk Institute of Science and Technology (South Korea)

c Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GA FILM; GRAIN BOUNDARY DENSITIES; HIGH DENSITY; HIGH TEMPERATURE; HOLE CARRIERS; OUTPUT POWER; PATTERNED SUBSTRATES; RANDOM TILTING; REVERSE BIAS; SI SUBSTRATES; VISIBLE EMISSIONS; ZNO; ZNO LAYERS; ZNO/P-SI;

GALLIUM; GALLIUM ALLOYS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HETEROJUNCTIONS; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTING ZINC COMPOUNDS; SILICON; SUBSTRATES; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350345446 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-009-9854-y Document Type: Article

Times cited : (9)

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