Organic thin-film transistors with anodized gate dielectric patterned by self-aligned embossing on flexible substrates

Advanced Functional Materials

Volumn 22, Issue 6, 2012, Pages 1209-1214

  Qin, Yiheng ^a,c   Turkenburg, Daniël H ^a   Barbu, Ionut ^a   Smaal, Wiljan T T ^a   Myny, Kris ^b   Lin, Wan Yu ^b   Gelinck, Gerwin H ^a   Heremans, Paul ^b   Liu, Johan ^c   Meinders, Erwin R ^a  

^a HOLST CENTRE   (Netherlands)

^b IMEC   (Belgium)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

aluminum anodization; organic electronics; self alignment; thin film transistors

Indexed keywords

ANODIZATIONS; ANODIZED ALUMINUM OXIDE; CHANNEL LENGTH; DEFECT-FREE; FLEXIBLE SUBSTRATE; HIGH REPRODUCIBILITY; HOT EMBOSSING PROCESS; MULTI-LEVEL; ON-OFF RATIO; ORGANIC ELECTRONICS; ORGANIC THIN FILM TRANSISTORS; SELF-ALIGNED; SELF-ALIGNED PATTERNING; SELF-ALIGNMENT; SINGLE-STEP; STABLE PROCESS; THIN FILM TRANSISTORS (TFT);

FLEXIBLE MANUFACTURING SYSTEMS; GATE DIELECTRICS; STABILITY CRITERIA; THIN FILM TRANSISTORS;

CHEMICAL SENSORS;

EID: 84863338246     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201102266     Document Type: Article

References (36)

1. M. L. Chabinyc, A. Salleo, Chem. Mater. 2004, 16, 4509.
2. G. H. Gelinck, H. E. A. Huitema, E. Van Veenendaal, E. Cantatore, L. Schrijnemakers, J. B. P. H. Van Der Putten, T. C. T. Geuns, M. Beenhakkers, J. B. Giesbers, B. H. Huisman, Nat. Mater. 2004, 3, 106.
3. C. Sheraw, L. Zhou, J. Huang, D. Gundlach, T. Jackson, M. Kane, I. Hill, M. Hammond, J. Campi, B. Greening, Appl. Phys. Lett. 2002, 80, 1088.
4. K. Myny, S. Steudel, P. Vicca, M. J. Beenhakkers, N. A. J. M. van Aerle, G. H. Gelinck, J. Genoe, W. Dehaene, P. Heremans, Solid-State Electron. 2009, 53, 1220.
5. L. Wang, D. Fine, A. Dodabalapur, Appl. Phys. Lett. 2004, 85, 6386.
6. Z. T. Zhu, J. T. Mason, R. Dieckmann, G. G. Malliaras, Appl. Phys. Lett. 2002, 81, 4643.
7. W.-Y. Lin, R. Müller, K. Myny, S. Steudel, J. Genoe, P. Heremans, Org. Electron. 2011, 12, 955.
8. L. Majewski, M. Grell, S. Ogier, J. Veres, Org. Electron. 2003, 4, 27.
9. M. van Neer, D. van den Berga, P. Giesen, K. Tempelaars, S. Green, M. van de Moosdijk, E. R. Meinders, I. Yakimets, Fabrication of flexible display backplanes on high temperature resistant polymer substrates, presented at Int. Conf. on Organic Electronics, Roma, June 2011.
10. H. J. Kim, M. Almanza-Workman, B. Garcia, O. Kwon, F. Jeffrey, S. Braymen, J. Hauschildt, K. Junge, D. Larson, D. Stieler, A. Chaiken, B. Cobene, R. Elder, W. Jackson, M. Jam, A. Jeans, H. Luo, P. Mei, C. Perlov, C. Taussig, J. Soc. Inf. Display 2009, 17, 963.
11. E. Lausecker, Y. Huang, T. Fromherz, J. C. Sturm, S. Wagner, Appl. Phys. Lett. 2010, 96, 263501.
12. U. Palfinger, C. Auner, H. Gold, A. Haase, J. Kraxner, T. Haber, M. Sezen, W. Grogger, G. Domann, G. Jakopic, Adv. Mater. 2010, 22, 5115.
13. S. Li, W. Chen, D. Chu, S. Roy, Adv. Mater. 2011, 23, 4107.
14. K. D. Kim, T. M. Lee, J. D. Jo, B. O. Choi, D. S. Kim, J. Korean Phys. Soc. 2009, 54, 489.
15. M. D. Austin, H. Ge, W. Wu, M. Li, Z. Yu, D. Wasserman, S. Lyon, S. Y. Chou, Appl. Phys. Lett. 2004, 84, 5299.
16. M. Beck, M. Graczyk, I. Maximov, E. L. Sarwe, T. Ling, M. Keil, L. Montelius, Microelectron. Eng. 2002, 61, 441.
17. X. Li, W. T. T. Smaal, C. Kjellander, B. van der Putten, K. Gualandris, E. C. P. Smits, J. Anthony, D. J. Broer, P. W. M. Blom, J. Genoe, Org. Electron. 2011, 12, 1319.
18. J. E. Anthony, J. S. Brooks, D. L. Eaton, S. R. Parkin, J. Am. Chem. Soc. 2001, 123, 9482.
19. S. R. Saudari, Y. J. Lin, Y. Lai, C. R. Kagan, Adv. Mater. 2010, 22, 5063.
20. M. Mas-Torrent, C. Rovira, Chem. Rev. 2011, 111, 4833.
21. S. Steudel, S. De Vusser, S. De Jonge, D. Janssen, S. Verlaak, J. Genoe, P. Heremans, Appl. Phys. Lett. 2004, 85, 4400.
22. O. Jessensky, F. Muller, U. Gosele, Appl. Phys. Lett. 1998, 72, 1173.
23. Product information from MicroChem Corp., http://www.microchem.com/pdf/ SU-8-table-of-properties.pdf (accessed May 2011).
24. M. J. Lee, K. S. Chung, J. I. Han, S. K. Park, S. J. Hong, D. S. Kim, J. Korean Phys. Soc. 2002, 41, 795.
25. J. H. Bae, H. Kim, G. Horowitz, S. D. Lee, Solid-State Electron. 2011, 63, 163.
26. D. Hwang, C. Fuentes-Hernandez, J. Kim, W. Potscavage Jr., B. Kippelen, Org. Electron. 2011, 12, 1108.
27. R. Street, A. Salleo, M. Chabinyc, Phys. Rev. B 2003, 68, 085316.
28. I. Torres, D. Taylor, E. Itoh, Appl. Phys. Lett. 2004, 85, 314.
29. S. Goettling, J. Brill, N. Fruehauf, J. Pflaum, E. Margallo- Balbás, Proc. SPIE 2005, 5940, 594010.
30. R. B. Heimann, Classic and advanced ceramics: from fundamentals to applications, Wiley-VCH, Weinheim, Germany 2010, Ch. 7.
31. A. Jeans, M. Almanza-Workman, R. Cobene, R. Elder, R. Garcia, F. Gomez-Pancorbo, W. Jackson, M. Jam, H. J. Kim, O. Kwon, F. Jeffrey, S. Braymen, J. Hauschildt, K. Junge, D. Larson, D. Stieler, Proc. SPIE 2010, 7637, 763719.
32. J. Park, I. Song, S. Kim, C. Kim, J. Lee, H. Lee, E. Lee, H. Yin, K. K. Kim, Appl. Phys. Lett. 2008, 93, 053501.
33. J. K. Jeong, J. H. Jeong, H. W. Yang, J. S. Park, Y. G. Mo, H. D. Kim, Appl. Phys. Lett. 2007, 91, 113505.
34. P. Maury, D. Turkenburg, N. Stroeks, P. Giesen, I. Barbu, E. Meinders, A. van Bremen, N. Iosad, R. van der Werf, H. Onvlee, Microelectron. Eng. 2011, 88, 2052.
35. C. E. Hendriks, P. J. Smith, J. Perelaer, A. M. J. van den Berg, U. S. Schubert, Adv. Funct. Mater. 2008, 18, 1031.
36. C. Yang, K. Shin, S. Y. Yang, H. Jeon, D. Choi, D. S. Chung, C. E. Park, Appl. Phys. Lett. 2006, 89, 153508.