Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication

Applied Physics Letters

Volumn 96, Issue 26, 2010, Pages

  Lausecker, E ^a,b   Huang, Y ^a   Fromherz, T ^b   Sturm, J C ^a   Wagner, S ^a  

^a Princeton University   (United States)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON (A-SI); AMORPHOUS SILICON THIN-FILM TRANSISTOR; DEVICE LAYERS; HARDMASKS; IMPRINT LITHOGRAPHY; IMPRINT RESIST; NICKEL SILICIDE; PATTERN DEFINITION; SELF-ALIGNED; THREE-LEVEL; TOP-GATE;

AMORPHOUS FILMS; CHROMIUM; MOLDS; NANOIMPRINT LITHOGRAPHY; SEMICONDUCTING ORGANIC COMPOUNDS; SILICIDES; THIN FILM TRANSISTORS;

AMORPHOUS SILICON;

EID: 77954324584     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3457446     Document Type: Article

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