Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

Nanotechnology

Volumn 23, Issue 11, 2012, Pages

  Kim, Jung Hyuk ^a   Moon, So Ra ^a   Kim, Yong ^a   Chen, Zhi Gang ^b   Zou, Jin ^b   Choi, Duk Yong ^c   Joyce, Hannah J ^d   Gao, Qiang ^c   Tan, H Hoe ^c   Jagadish, Chennupati ^c  

^a Dong A University   (South Korea)

^b UNIVERSITY OF QUEENSLAND   (Australia)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIALLY GROWN; GERMANIUM NANOWIRES; NANO-BRIDGES; REACTANT GAS; SIDE WALLS; SILICON SUBSTRATES; TWO-TEMPERATURE;

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GERMANIUM;

NANOWIRES;

EID: 84863260707     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/11/115603     Document Type: Article

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