Effects of P implantation and post-implantation annealing on defect formation in ZnO

Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

  Wang, X J ^a,b   Chen, W M ^a   Ren, F ^c   Pearton, S ^c   Buyanova, I A ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINED EFFECT; D CENTERS; DEEP DONOR; DEFECT FORMATION; DONOR-ACCEPTOR-PAIR RECOMBINATION; OPTICALLY DETECTED MAGNETIC RESONANCE; PL BANDS; PL MEASUREMENTS; POSTIMPLANTATION ANNEALING; RADIATIVE RECOMBINATION; RED EMISSIONS; SPECTRAL DEPENDENCES; SPIN-DEPENDENT RECOMBINATION; WIDE SPECTRAL RANGE; ZINC VACANCY; ZNO; ZNO SINGLE CRYSTALS;

ANNEALING; ION IMPLANTATION; MAGNETIC RESONANCE; SINGLE CRYSTALS; ZINC; ZINC OXIDE;

DEFECTS;

EID: 84863240719     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3687919     Document Type: Article

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