ZnO doped with transition metal ions

IEEE Transactions on Electron Devices

Volumn 54, Issue 5, 2007, Pages 1040-1048

  Pearton, Stephen J ^a   Norton, David P ^a   Ivill, Matt P ^a   Hebard, Art F ^b   Zavada, John M ^c   Chen, Weimin M ^d   Buyanova, Irina A ^d  

^a UNIVERSITY OF FLORIDA   (United States)

^b Army Research Office ^*  (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

^d LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Spintronics; ZnO

Indexed keywords

HALL EFFECT; IONS; LIGHT POLARIZATION; RELAXATION TIME; SEMICONDUCTOR DOPING; TRANSITION METALS; ZINC OXIDE;

POLARIZED LIGHT EMISSION; SPIN RELAXATION TIME; TRANSITION METAL IONS;

MAGNETOELECTRONICS;

EID: 34247847709     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.894371     Document Type: Article

References (79)

1. P. Kacman, "Spin interactions in DMS and magnetic semiconductor structures," Semicond. Sci. Technol., vol. 16, no. 4, pp. R25-R39, Apr. 2001.
2. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, "Spintronics: A spin-based electronics vision for the future," Science, vol. 294, no. 5546, pp. 1488-1495, Nov. 2001.
3. S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton, N. Theodoropoulou, A. F. Hebard, Y. D. Park, F. Ren, J. Kim, and L. A. Boatner, "Wide bandgap ferromagnetic semiconductors and oxides," J. Appl. Phys., vol. 93, no. 1, pp. 1-21, Jan. 2003.
4. J. M. D. Coey, M. Venkatesan, and C. B. Fitzgerald, "Donor impurity band exchange in dilute ferromagnetic oxides," Nat. Mater., vol. 4, no. 4, pp. 173-176, Apr. 2005.
5. K. Sato and H. Katayama-Yoshida, "First principles design for semiconductor spintronics," Semicond. Sci. Technol., vol. 17, no. 4, pp. 367-376, Apr. 2002.
6. W. Prellier, A. Fouchet, and B. Mercey, "Oxide-diluted magnetic semiconductors: A review of the experimental status," J. Phys., Condens. Matter, vol. 15, no. 37, pp. R1583-R1601, Sep. 2003.
7. T. Fukumura, Y. Yamada, H. Toyosaki T. Hasegawa, H. Koinuma, and M. Kawasaki, "Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics," Appl. Surface. Sci., vol. 223, no. 1-3, pp. 62-67, Feb. 2004.
8. S. J. Pearton, W. H. Heo, M. Ivill, D. P. Norton, and T. Steiner, "Dilute magnetic semiconducting oxides," Semicond. Sci. Technol. vol. 19, no. 10, pp. R59-R76, Oct. 2004.
9. I. Zutic, J. Fabian, and S. D. Sarma, "Spintronics: Fundamentals and applications," Rev. Mod. Phys., vol. 76, no. 2, pp. 323-410, Apr. 2004.
10. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, "Zener model description of ferromagnetism in zinc-blende magnetic semiconductors," Science, vol. 287, no. 5455, pp. 1019-1022, Feb. 2000.
11. K. Sato and H. Katayama-Yoshida, "Stabilization of ferromagnetic states by electron doping in Fe-,Co-, or Ni-doped ZnO," Jpn. J. Appl. Phys. vol. 40, no. 4, pp. L334-L336, Apr. 2001.
12. T. Fukumura, Z. Jin, M. Kawasaki, T. Shono, T. Hasegawa, S. Koshihara, and H. Koinuma, "Magnetic properties of Mn-doped ZnO," Appl. Phys. Lett., vol. 78, no. 7, pp. 958-960, Feb. 2001.
13. T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, "An oxide-diluted magnetic semiconductor: Mn-doped ZnO," Appl. Phys. Lett., vol. 75, no. 21, pp. 3366-3368, Nov. 1999.
14. Z. Jin, T. Fukumura, M. Kawasaki, K. Ando, H. Saito, T. Sekiguchi, Y. Z. Yoo, M. Murakami, Y. Matsumoto, T. Hasegawa, and H. Koinuma, "High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties," Appl. Phys. Lett., vol. 78, no. 24, pp. 3824-3826, Jun. 2001.
15. xO thin films by pulsed laser deposition," J. Appl. Phys., vol. 92, no. 10, pp. 6066-6071, Nov. 2002.
16. xO films," Solid State Commun., vol. 121, no. 6, pp. 371-373, Feb. 2002.
17. S. J. Han, T. H. Jang, Y. B. Kim, B. G. Park, J. H. Park, and Y. H. Jeong, "Magnetism in Mn-doped ZnO bulk samples prepared by solid state reaction," Appl. Phys. Lett., vol. 83, no. 5, pp. 920-922, Aug. 2003.
18. X. M. Cheng and C. L. Chien, "Magnetic properties of epitaxial Mn-doped ZnO thin films," J. Appl. Phys., vol. 93, no. 10, pp. 7876-7879, May 2003.
19. Z. Jin, Y.-Z. Yoo, T. Sekiguchi, T. Chikyow, H. Ofuchi, H. Fujioka, M. Oshima, and H. Koinuma, "Blue and ultraviolet cathodoluminescence from Mn-doped epitaxial ZnO thin films," Appl. Phys. Lett., vol. 83, no. 1, pp. 39-41, Jul. 2003.
20. K. Ando, H. Saito, V. Zayets, and M. C. Debnath, "Optical properties and functions of dilute magnetic semiconductors," J. Phys., Condens. Matter, vol. 16, no. 48, pp. S5541-S5548, Dec. 2004.
21. xO epitaxial thin films," Appl. Phys. Lett., vol. 80, no. 24, pp. 4561-4563, Jun. 2002.
22. Y. W. Heo, M. P. Ivill, K. Ip, D. P. Norton, and S. J. Pearton, "Effects of high-dose Mn implantation into ZnO grown on sapphire," Appl. Phys. Lett., vol. 84, no. 13, pp. 2292-2294, Mar. 2004.
23. S. W. Lim, M. C. Jeong, M. H. Ham, and J. M. Hyoung, "Hole-mediated ferromagnetic properties in ZnMnO," Jpn. J. Appl. Phys., vol. 43, no. 2, pp. L280-L283, Feb. 2004.
24. D. P. Norton, S. J. Pearton, A. F. Hebard, N. Theodoropoulou, L. A. Boatner, and R. G. Wilson, "Ferromagnetism in Mn-implanted ZnO:SN single crystals," Appl. Phys. Lett., vol. 82, no. 2, pp. 239-241, Jan. 2003.
25. K. Ando, H. Saito, Z. Jin, T. Fukumura, M. Kawasaki, Y. Matsumoto, and H. Koinuma, "Magneto-optical properties of ZnO-based diluted magnetic semiconductors," J. Appl. Phys., vol. 89, no. 11, pp. 7284-7286, Jun. 2001.
26. K. Ueda, H. Tabata, and T. Kawai, "Magnetic and electric properties of transition-metal-doped ZnO films," Appl. Phys. Lett., vol. 79, no. 7, pp. 988-990, Aug. 2001.
27. xO," Appl. Phys. Lett., vol. 78, no. 18, pp. 2700-2702, Apr. 2001.
28. xO thin films," Appl. Phys. Lett., vol. 80, no. 18, pp. 3358-3360, May 2002.
29. S. W. Yoon, S.-B. Cho, S. C. We, S. Yoon, B. J. Suh, H. K. Song, and Y. J. Shin, "Magnetic properties of ZnO-based diluted magnetic semiconductors," J. Appl. Phys., vol. 93, no. 10, pp. 7879-7882, May 2003.
30. K. Sato and H. Katayama-Yoshida, "Materials design of transparent and half-metallic ferromagnets in V or Cr-doped ZnS, ZnSe and ZnTe," Jpn. J. Appl. Phys., vol. 40, no. 7, pp. L651-L653, Jul. 2001.
31. K. Sato and H. Katayama-Yoshida, "Ferromagnetism in a transition metal atom doped ZnO," Physica E, vol. 10, no. 1, pp. 251-255, May 2001.
32. H. Katayama-Yoshida and K. Sato, "Materials design for semiconductor spintronics by ab initio electronic-structure calculation," Physica B, vol. 327, no. 2, pp. 337-343, Apr. 2003.
33. K. Sato and H. Katayama-Yoshida, "Electronic structure and ferromagnetism of transition-metal-impurity-doped zinc oxide," Physica B, vol. 308-310, no. 1, pp. 904-907, Dec. 2001.
34. P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Osorio Guillen, B. Johansson, and G. A. Gehring, "Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO," Nat. Mater., vol. 2, no. 10, pp. 673-677, Oct. 2003.
35. P. Sharma, A. Gupta, F. J. Owens, A. Inoue, and K. V. Rao, "Room temperature spintronic material - Mn-doped ZnO revisited," J. Magn. Magn. Mater., vol. 282, no. 11, pp. 115-121, Nov. 2004.
36. D. C. Kundaliya, S. B. Ogale, S. E. Lofland, S. Dhar, C. J. Metting, S. R. Shinde, Z. Ma, B. Varughese, K. V. Ramanujachary, L. Salamanca-Riba, and T. Venkatesan, "On the origin of high-temperature ferromagnetism in the low-temperature-processed Mn-Zn-O system," Nat. Mater., vol. 3, no. 10, pp. 709-714, Oct. 2004.
37. M. A. García, M. L. Ruiz-González, A. Quesada, J. L. Costa-Krämer, J. F. Fernández, S. J. Khatib, A. Wennberg, A. C. Caballero, M. S. Martín-González, M. Villegas, F. Briones, J. M. González-Calbet, and A. Hernando, "Interface double-exchange ferromagnetism in the Mn-Zn-O system: New class of biphase magnetism," Phys. Rev. Lett., vol. 94, no. 21, p. 217 206, Jun. 2005.
38. I. Satoh and T. Kobayashi, "Magnetic and optical properties of novel magnetic semiconductor Cr-doped ZnO and its application to all oxide p-i-n diode," Appl. Surf. Sci., vol. 216, no. 1, pp. 603-608, Jun. 2003.
39. N. H. Hong, V. Brize, and J. Sakai, "Mn-doped ZnO and (Mn, Cu)-doped ZnO thin films: Does the Cu doping indeed play a key role in tuning the ferromagnetism?" Appl. Phys. Lett., vol. 86, no. 8, p. 082 505, Feb. 2005.
40. N. H. Hong, J. Sakai, and A. Hassini, "Magnetism in V-doped ZnO thin films," J. Phys., Condens. Matter., vol. 17, no. 1, pp. 199-204, Jan. 2005.
41. Y. H. Jeong, S. J. Han, J. H. Park, and Y. H. Lee, "A critical examination of room temperature ferromagnetism in transition metal-doped oxide semiconductors," J. Magn. Mag. Mater., vol. 272-276, no. 3, pp. 1976-1980, May 2004.
42. 2+-doped ZnO thin films prepared from colloidal diluted magnetic semiconductor quantum dots," Appl. Phys. Lett., vol. 85, no. 8, pp. 1395-1397, Aug. 2004.
43. 2+-doped ZnO aggregates prepared from colloidal diluted magnetic semiconductor quantum dots," Phys. Rev. Lett., vol. 91, no. 15, p. 157 202, Oct. 2003.
44. xO," Phys. Rev. B, Condens. Matter, vol. 65, no. 8, p. 085 209, Feb. 2002.
45. C.-H. Chien, S. H. Chiou, G. Y. Guo, and Y.-D. Yao, "Electronic structure and magnetic moments of 3d transition metal-doped ZnO," J. Magn. Magn. Mater., vol. 282, no. 11, pp. 275-278, Nov. 2004.
46. X. Feng, "Electronic structures and ferromagnetism of Cu- and Mn-doped ZnO," J. Phys., Condens. Matter., vol. 16, no. 24, pp. 4251-4260, Jun. 2004.
47. S. Y. Yun, G.-B. Cha, Y. Kwon, S. Cho, S. C. Soon, and C. Hong, "First-principles calculations on magnetism of transition metal doped zinc oxide," J. Magn. Magn. Mater., vol. 272-276, no. 5, pp. E1563-E1564, May 2004.
48. M. Venkatesan, C. B. Fitzgerald, J. G. Lunney, and J. M. D. Coey, "Anisotropic ferromagnetism in substituted zinc oxide," Phys. Rev. Lett., vol. 93, no. 17, p. 177 206, Oct. 2004.
49. K. W. Nielsen, J. B. Phillip, M. Opel, A. Erb, J. Simon, L. Alff, and R. Gross, "Ferromagnetism in Mn-doped ZnO due to impurity bands," Superlatt. Microstruct., vol. 37, no. 5, pp. 327-332, May 2005.
50. M. Kunisu, F. Oba, H. Ikeno, I. Tananka, and T. Yamamoto, "Local environment of Mn dopant in ZnO by near-edge x-ray absorption fine structure analysis," Appl. Phys. Lett., vol. 86, no. 12, p. 121 902, Mar. 2005.
51. E. Rita, U. Wahl, J. G. Correia, E. Alves, and J. C. Soares, "Lattice location and thermal stability of implanted Fe in ZnO," Appl. Phys. Lett., vol. 85, no. 21, pp. 4899-4901, Nov. 2004.
52. R. K. Zheng, H. Liu, X. X Zhang, V. A. L. Roy, and A. B. Djurisic, "Exchange bias and the origin of magnetism in Mn-doped ZnO tetrapods," Appl. Phys. Lett., vol. 85, no. 16, pp. 2589-2591, Sep. 2004.
53. T. Wakano, N. Fujimura, Y. Morinaga, N. Abe, A. Ashida, and T. Ito, "Magnetic and magneto-transport properties of ZnO:NI films," Physica E, vol. 10, no. 1, pp. 260-264, May 2001.
54. H. Saeki, H. Tabata, and T. Kawai, Magnetic and electric properties of vanadium doped ZnO films," Solid State Commun., vol. 120, no. 11, pp. 439-441, Nov. 2001.
55. D. P. Norton, M. E. Overberg, S. J. Pearton, K. Pruessner, J. D. Budai, L. A. Boatner, M. F. Chisholm, J. S. Lee, Z. G. Khim, Y. D. Park, and R. G. Wilson, "Ferromagnetism in cobalt-implanted ZnO," Appl. Phys. Lett., vol. 83, no. 26, pp. 5488-5490, Dec. 2003.
56. H. J. Lee, S. Y. Jeong, C. R. Cho, and C. H. Park, "Study of diluted magnetic semiconductor: Co-doped ZnO," Appl. Phys. Lett., vol. 81, no. 21, pp. 4020-4022, Nov. 2002.
57. S. J. Hahn, J. W. Song, C. H. Yang, S. H. Park, J. H. Park, Y. H. Jeong, and K. W. Rhie, "A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu," Appl. Phys. Lett., vol. 81, no. 22, pp. 4212-4214, Nov. 2002.
58. K. Rode, A. Anane, R. Mattana, J.-P. Contour, O. Durand, and R. LeBourgeois, "Magnetic semiconductors based on cobalt substituted ZnO," J. Appl. Phys., vol. 93, no. 10, pp. 7676-7679, May 2003.
59. S. G. Yang, A. B. Pakhomov, S. T. Hung, and C. Y. Wong, "Room temperature magnetism in sputtered (Zn,Co)O films," IEEE Trans. Magn., vol. 38, no. 5, pp. 2877-2879, Sep. 2002.
60. xO thin films. to be published.
61. M. Ivill, S. J. Pearton, D. P. Norton, J. Kelly, and A. F. Hebard, "Magnetization dependence on electron density in epitaxial ZnO thin films codoped with Mn and Sn," J. Appl. Phys., vol. 97, no. 5, p. 053 904, Mar. 2005.
62. G. Lawes, A. S. Risbud, A. P. Ramirez, and R. Seshadri, "Absence of ferromagnetism in Co and Mn substituted polycrystalline ZnO," Phys. Rev. B, Condens. Matter, vol. 71, no. 4, p. 045 201, Jan. 2005.
63. xO single crystals," J. Appl. Phys., vol. 97, no. 2, p. 023 906, Jan. 2005.
64. xO: A predicted high-temperature ferromagnetic semiconductor," Phys. Rev. B, Condens. Matter, vol. 69, no. 4, p. 041 308, Jan. 2004.
65. A. C. Tuan, J. D. Bryan, A. B. Pakhomov, V. Shutthanandan, S. Thevuthasan, D. E. McCready, D. Gaspar, M. H. Engelhard, J. W. Rogers, Jr., K. Krishnan, D. R. Gamelin, and S. A. Chambers, "Epitaxial growth and properties of Co-doped ZnO on sapphire substrates," Phys. Rev. B, Condens. Matter, vol. 70, no. 6, p. 054 424, Aug. 2004.
66. T. Fukumura, H. Toyosaki, and Y. Yamada, "Magnetic oxide semiconductors," Semicond. Sci. Technol., vol. 20, no. 4, pp. S103-S111, Apr. 2005.
67. C. Liu, F. Yun, and H. Morkoç, "Ferromagnetism of ZnO and GaN: A review," J. Mater. Sci., Mater. Electron., vol. 16, no. 9, pp. 555-597, Sep 2005.
68. I. A. Buyanova, M. Izadifard, L. Storasta, W. M. Chen, J. Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C.-C. Pan, G.-T. Chen, J.-I. Chyi, and J. M. Zavada, "Optical and electrical characterization of (Ga,Mn)N/InGaN MOW LEDs," J. Electron. Mater., vol. 33, no. 5, pp. 467-472, May 2004.
69. I. A. Buyanova, M. Izadifard, W. M. Chen, J. Kim, F. Ren, G. Thaler, C. R. Abernathy, S. J. Pearton, C. Pan, G. Chen, J. Chyi, and J. M. Zavada, "On the origin of spin loss in GaMnN/InGaN light-emitting diodes," Appl. Phys. Lett., vol. 84, no. 14, pp. 2599-2601, Apr. 2004.
70. I. A. Buyanova, J. P. Bergman, W. M. Chen, G. Thaler, R. Frazier, C. R. Abernathy, S. J. Pearton, J. Kim, F. Ren, F. V. Kyrychenko, C. J. Stanton, C.-C. Pan, G.-T. Chen, J.-I. Chyi, and J. M. Zavada, "Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers," J. Vac. Sci. Technol. B, Microelectron. Processs. Phenom., vol. 22, no. 6, pp. 2668-2673, Nov. 2004.
71. H. Ohno, "Making nonmagnetic semiconductors ferromagnetic," Science vol. 281, no. 5379, pp. 951-956, Aug. 1998.
72. L. Berger and G. Bergmann, The Hall Effect and Its Applications, C. L. Chien and C. R. Westgate, Eds. New York: Plenum, 1979, p. 55.
73. T. Jungwirth, Q. Niu, and A. H. MacDonald, "Anomalous hall effect in ferromagnetic semiconductors," Phys. Rev. Lett., vol. 88, no. 22, p. 207 208, May 2002.
74. Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow, S.-Y. Koshihara, and H. Koinuma, "Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide," Science, vol. 291, no. 5505, pp. 854-856, Feb. 2001.
75. 2+," J. Appl. Phys., vol. 96, no. 9, p. 5097, Nov. 2004.
76. 2-δ films," Phys. Rev. Lett., vol. 92, no. 16, p. 166 601, Apr. 2004.
77. H. Toyosaki, T. Fukumura, Y. Yamada, K. Nakajima, T. Chikyow, T. Hasegawa, H. Koinuma, and M. Kawasaki, "Anomalous hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor," Nat. Mater., vol. 3, no. 4, pp. 221-224, Apr. 2004.
78. 2 rutile thin films grown by laser molecular beam epitaxy," Jpn. J. Appl. Phys., vol. 40, no. 11B, pp. L1204-L1206, Nov. 2001.
79. I. Buyanova, W. M. Chen, M. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. Dong, A. Osinsky, B. Hertog, A. Dabiran, and P. P. Chow, "Optical characterization of ZnMnO-based dilute magnetic semiconductor structures," J. Vac. Sci. Technol., vol. 24, no. 1, pp. 259-264, Jan. 2006.