SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 158, Issue 6, 2011, Pages

Interfacial self-Cleaning during PEALD HfO2 process on GaAs using TDMAH/O2 with different (NH4)2S cleaning time

(6) Byun, Young Chul a An, Chee Hong a Choi, Ju Yun a Kim, Chung Yi b Cho, Mann Ho b Kim, Hyoungsub a

a Sungkyunkwan University (South Korea)

b Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BEFORE AND AFTER; CLEANING METHODS; DEPOSITION TEMPERATURES; DIPPING TIME; ELECTRICAL PROPERTY; FREQUENCY DISPERSION; GAAS; GAAS SUBSTRATES; HYSTERESIS CHARACTERISTICS; PLASMA EFFECTS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SELF-CLEANING PROCESS; TETRAKIS;

ATOMIC LAYER DEPOSITION; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM ARSENIDE; HAFNIUM; HAFNIUM COMPOUNDS; PLASMA DEPOSITION; SEMICONDUCTING GALLIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

CLEANING;

EID: 79955545799 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3569751 Document Type: Article

Times cited : (8)

References (25)

1
- 0042341502
- 10.1063/1.1590743
- P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H.-J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, Appl. Phys. Lett., 83, 180 (2003). 10.1063/1.1590743
- (2003) Appl. Phys. Lett. , vol.83 , pp. 180
- Ye, P.D.¹ Wilk, G.D.² Yang, B.³ Kwo, J.⁴ Chu, S.N.G.⁵ Nakahara, S.⁶ Gossmann, H.-J.L.⁷ Mannaerts, J.P.⁸ Hong, M.⁹ Ng, K.K.¹⁰

2
- 0037766787
- 10.1109/LED.2003.812144
- P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H.-J. L. Gossmann, M. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, IEEE Electron Device Lett., 24, 209 (2003). 10.1109/LED.2003.812144
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 209
- Ye, P.D.¹ Wilk, G.D.² Kwo, J.³ Yang, B.⁴ Gossmann, H.-J.L.⁵ Frei, M.⁶ Chu, S.N.G.⁷ Mannaerts, J.P.⁸ Sergent, M.⁹ Hong, M.¹⁰

3
- 24144470069
- Formation and characterization of nanometer scale metal-oxide- semiconductor structures on GaAs using low-temperature atomic layer deposition
- DOI 10.1063/1.1954902, 013501
- P. D. Ye, G. D. Wilk, E. E. Tois, and J. J. Wang, Appl. Phys. Lett., 87, 013501 (2005). 10.1063/1.1954902 (Pubitemid 41227760)
- (2005) Applied Physics Letters , vol.87 , Issue.1 , pp. 1-3
- Ye, P.D.¹ Wilk, G.D.² Tois, E.E.³ Wang, J.J.⁴

4
- 69249166279
- 10.1557/mrs2009.138
- M. Houssa, E. Chagarov, and A. Kummel, MRS Bull., 34, 504 (2009). 10.1557/mrs2009.138
- (2009) MRS Bull. , vol.34 , pp. 504
- Houssa, M.¹ Chagarov, E.² Kummel, A.³

5
- 34547895938
- Y. Xuan, H.-C. Lin, and P. D. Ye, IEEE Trans. Electron Devices, ED-54, 1811 (2007).
- (2007) IEEE Trans. Electron Devices , vol.54 , pp. 1811
- Xuan, Y.¹ Lin, H.-C.² Ye, P.D.³

6
- 39349086978
- 10.10632F1.2838471
- P. T. Chen, Y. Sun, E. Kim, P. C. McIntyre, W. Tsai, M. Garner, P. Pianetta, Y. Nishi, and C. O. Chui, J. Appl. Phys., 103, 034106 (2008). 10.10632F1.2838471
- (2008) J. Appl. Phys. , vol.103 , pp. 034106
- Chen, P.T.¹ Sun, Y.² Kim, E.³ McIntyre, P.C.⁴ Tsai, W.⁵ Garner, M.⁶ Pianetta, P.⁷ Nishi, Y.⁸ Chui, C.O.⁹

7
- 33750015764
- 3 plasma pretreatment
- DOI 10.1063/1.2363145
- H.-L. Lu, L. Sun, S.-J. Ding, M. Xu, D. W. Zhang, and L.-K. Wang, Appl. Phys. Lett., 89, 152910 (2006). 10.1063/1.2363145 (Pubitemid 44570589)
- (2006) Applied Physics Letters , vol.89 , Issue.15 , pp. 152910
- Lu, H.-L.¹ Sun, L.² Ding, S.-J.³ Xu, M.⁴ Zhang, D.W.⁵ Wang, L.-K.⁶

8
- 34547285895
- 2/TaN gate stack and thermal nitridation surface passivation
- DOI 10.1063/1.2749840
- F. Gao, S. J. Lee, D. Z. Chi, S. Balakumar, and D.-L. Kwong, Appl. Phys. Lett., 90, 252904 (2007). 10.1063/1.2749840 (Pubitemid 47141224)
- (2007) Applied Physics Letters , vol.90 , Issue.25 , pp. 252904
- Gao, F.¹ Lee, S.J.² Chi, D.Z.³ Balakumar, S.⁴ Kwong, D.-L.⁵

9
- 30844441641
- Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
- DOI 10.1063/1.2164327, 022106
- S. Koveshnikov, W. Tsai, I. Ok, J. C. Lee, V. Torkanov, M. Yakimov, and S. Oktyabrsky, Appl. Phys. Lett., 88, 022106 (2006). 10.1063/1.2164327 (Pubitemid 43102705)
- (2006) Applied Physics Letters , vol.88 , Issue.2 , pp. 1-3
- Koveshnikov, S.¹ Tsai, W.² Ok, I.³ Lee, J.C.⁴ Torkanov, V.⁵ Yakimov, M.⁶ Oktyabrsky, S.⁷

10
- 33751556188
- 2 dielectric and germanium interfacial passivation layer
- DOI 10.1063/1.2396914
- H.-S. Kim, I. Ok, M. Zhang, T. Lee, F. Zhu, L. Yu, J. C. Lee, S. Koveshnikov, W. Tsai, V. Tokranov, Appl. Phys. Lett., 89, 222904 (2006). 10.1063/1.2396914 (Pubitemid 44847579)
- (2006) Applied Physics Letters , vol.89 , Issue.22 , pp. 222904
- Kim, H.-S.¹ Ok, I.² Zhang, M.³ Lee, T.⁴ Zhu, F.⁵ Yu, L.⁶ Lee, J.C.⁷ Koveshnikov, S.⁸ Tsai, W.⁹ Tokranov, V.¹⁰ Yakimov, M.¹¹ Oktyabrsky, S.¹²

11
- 77951198414
- 10.1063/1.3377915
- D. C. Suh, Y. D. Cho, S. W. Kim, D. -H. Ko, Y. Lee, M.-H. Cho, and J. Oh, Appl. Phys. Lett., 96, 142112 (2010). 10.1063/1.3377915
- (2010) Appl. Phys. Lett. , vol.96 , pp. 142112
- Suh, D.C.¹ Cho, Y.D.² Kim, S.W.³ Ko, D.-H.⁴ Lee, Y.⁵ Cho, M.-H.⁶ Oh, J.⁷

12
- 58149503735
- 10.1109/LED.2008.2007579
- M. Passlack, R. Droopad, P. Fejes, and L. Wang, IEEE Electron Device Lett., 30, 2 (2009). 10.1109/LED.2008.2007579
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 2
- Passlack, M.¹ Droopad, R.² Fejes, P.³ Wang, L.⁴

13
- 69249185908
- 10.1557/mrs2009.137
- R. M. Wallace, P. C. McIntyre, J. Kim, and Y. Nishi, MRS Bull., 34, 493 (2009). 10.1557/mrs2009.137
- (2009) MRS Bull. , vol.34 , pp. 493
- Wallace, R.M.¹ McIntyre, P.C.² Kim, J.³ Nishi, Y.⁴

14
- 39749157907
- GaAs interfacial self-cleaning by atomic layer deposition
- DOI 10.1063/1.2883956
- C. L Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, Appl. Phys. Lett., 92, 071901 (2008). 10.1063/1.2883956 (Pubitemid 351304840)
- (2008) Applied Physics Letters , vol.92 , Issue.7 , pp. 071901
- Hinkle, C.L.¹ Sonnet, A.M.² Vogel, E.M.³ McDonnell, S.⁴ Hughes, G.J.⁵ Milojevic, M.⁶ Lee, B.⁷ Aguirre-Tostado, F.S.⁸ Choi, K.J.⁹ Kim, H.C.¹⁰ Kim, J.¹¹ Wallace, R.M.¹²

15
- 34547912197
- G. K. Dalapati, Y. Tong, W.-Y. Loh, H. K. Mun, and B. J. Cho, IEEE Trans. Electron Devices, ED-54, 1831 (2007).
- (2007) IEEE Trans. Electron Devices , vol.54 , pp. 1831
- Dalapati, G.K.¹ Tong, Y.² Loh, W.-Y.³ Mun, H.K.⁴ Cho, B.J.⁵

16
- 42549171457
- Interface of atomic layer deposited Hf O2 films on GaAs (100) surfaces
- DOI 10.1063/1.2908223
- J. C. Hackley, J. D. Demaree, and T. Gougousi, Appl. Phys. Lett., 92, 162902 (2008). 10.1063/1.2908223 (Pubitemid 351590723)
- (2008) Applied Physics Letters , vol.92 , Issue.16 , pp. 162902
- Hackley, J.C.¹ Demaree, J.D.² Gougousi, T.³

17
- 77949736209
- 10.1063/1.3357422
- R. Suri, D. J. Lichtenwalner, and V. Misra, Appl. Phys. Lett., 96, 112905 (2010). 10.1063/1.3357422
- (2010) Appl. Phys. Lett. , vol.96 , pp. 112905
- Suri, R.¹ Lichtenwalner, D.J.² Misra, V.³

18
- 56249143080
- 10.1063/1.2996261
- C. Y. Kim, S. W. Cho, M.-H. Cho, K. B. Chung, C.-H. An, H. Kim, H. J. Lee, and D.-H. Ko, Appl. Phys. Lett., 93, 192902 (2008). 10.1063/1.2996261
- (2008) Appl. Phys. Lett. , vol.93 , pp. 192902
- Kim, C.Y.¹ Cho, S.W.² Cho, M.-H.³ Chung, K.B.⁴ An, C.-H.⁵ Kim, H.⁶ Lee, H.J.⁷ Ko, D.-H.⁸

19
- 33645293455
- 10.1149/1.2183887
- P. K. Park, J.-S. Roh, B. H. Choi, and S.-W. Kang, Electrochem. Solid-State Lett., 9, F34 (2006). 10.1149/1.2183887
- (2006) Electrochem. Solid-State Lett. , vol.9 , pp. 34
- Park, P.K.¹ Roh, J.-S.² Choi, B.H.³ Kang, S.-W.⁴

20
- 33645507068
- 10.1063/1.2005370
- J. Kim, S. Kim, H. Jeon, M.-H. Cho, K.-B. Chung, and C. Bae, Appl. Phys. Lett., 87, 053108 (2005). 10.1063/1.2005370
- (2005) Appl. Phys. Lett. , vol.87 , pp. 053108
- Kim, J.¹ Kim, S.² Jeon, H.³ Cho, M.-H.⁴ Chung, K.-B.⁵ Bae, C.⁶

21
- 84957281270
- 10.1116/1.575859
- Z. H. Lu, C. Lagarde, E. Sacher, J. F. Currie, and A. Yelon, J. Vac. Sci. Technol. A., 7, 646 (1989). 10.1116/1.575859
- (1989) J. Vac. Sci. Technol. A. , vol.7 , pp. 646
- Lu, Z.H.¹ Lagarde, C.² Sacher, E.³ Currie, J.F.⁴ Yelon, A.⁵

22
- 34547850672
- Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2 O3 gate dielectric
- DOI 10.1063/1.2764438
- D. Shahrjerdi, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett., 91, 063501 (2007). 10.1063/1.2764438 (Pubitemid 47247197)
- (2007) Applied Physics Letters , vol.91 , Issue.6 , pp. 063501
- Shahrjerdi, D.¹ Tutuc, E.² Banerjee, S.K.³

23
- 0029344416
- 10.1143/JJAP.34.3447
- M. Sakata, M. Hayakawa, N. Nakano, and H. Ikoma, Jpn. J. Appl. Phys., 34, 3447 (1995). 10.1143/JJAP.34.3447
- (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 3447
- Sakata, M.¹ Hayakawa, M.² Nakano, N.³ Ikoma, H.⁴

24
- 0035851282
- An X-ray photoelectron spectroscopy study of the oxides of GaAs
- DOI 10.1016/S0169-4332(01)00583-9, PII S0169433201005839
- C. C. Surdu-Bob, S. O. Saied, and J. L. Sullivan, Appl. Surf. Sci., 183, 126 (2001). 10.1016/S0169-4332(01)00583-9 (Pubitemid 33039313)
- (2001) Applied Surface Science , vol.183 , Issue.1-2 , pp. 126-136
- Surdu-Bob, C.C.¹ Saied, S.O.² Sullivan, J.L.³

25
- 36048932797
- 2 gate dielectric: Fabrication and characterization
- DOI 10.1063/1.2806190
- D. Shahrjerdi, D. I. G.-Gutierrez, T. Akyol, S. R. Bank, E. Tutuc, J. C. Lee, and S. K. Banerjee, Appl. Phys. Lett., 91, 193503 (2007). 10.1063/1.2806190 (Pubitemid 350097923)
- (2007) Applied Physics Letters , vol.91 , Issue.19 , pp. 193503
- Shahrjerdi, D.¹ Garcia-Gutierrez, D.I.² Akyol, T.³ Bank, S.R.⁴ Tutuc, E.⁵ Lee, J.C.⁶ Banerjee, S.K.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.