Tensile-strained Ge/SiGeSn quantum wells for polarization-insensitive electro-absorption waveguide modulators

IEEE Journal of Quantum Electronics

Volumn 48, Issue 4, 2012, Pages 533-541

  Chang, Guo En ^a   Chang, Chia Ou ^b  

^a NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Electro optical materials; multiple quantum well waveguide modulators; quantum confined Stark effect; SiGeSn alloy; silicon photonics

Indexed keywords

1550 NM; ACTIVE MATERIAL; CMOS COMPATIBLE; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DESIGN AND MODELING; ELECTRO-ABSORPTION; ELECTRONIC BAND STRUCTURE; ELECTRONIC-PHOTONIC INTEGRATED CIRCUIT; EXCITONIC ABSORPTION; EXTINCTION RATIOS; INDEX-GUIDANCE; OPTICAL CONFINEMENT FACTORS; POLARIZATION-INSENSITIVE; QUANTUM CONFINED STARK EFFECT; SILICON PHOTONICS; SILICON SUBSTRATES; THEORETICAL MODELS; WAVEGUIDE DESIGN; WAVEGUIDE MODULATOR;

DESIGN; ELECTROOPTICAL MATERIALS; GERMANIUM; LIGHT MODULATORS; PHOTONIC DEVICES; POLARIZATION; TIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84863116682     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2012.2187174     Document Type: Article

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