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Journal of Applied Physics

Volumn 110, Issue 8, 2011, Pages

Effect of indirect interband absorption in Ge/SiGe quantum wells

(2) Kim, Jungho a Ahn, Doyeol b

a Kyung Hee University (South Korea)

b University of Seoul (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOUND STATE; DIRECT GAP IN GE; ENHANCEMENT FACTOR; GE/SIGE QUANTUM WELLS; INTERBAND ABSORPTION; QUANTUM WELL; ROOM TEMPERATURE; SECOND ORDERS; THEORETICAL FORMULA; TIME-DEPENDENT PERTURBATION THEORY; TRANSITION ENERGY; VALENCE BAND MIXING; VARIATIONAL METHODS;

ENERGY GAP; LIGHT ABSORPTION; PERTURBATION TECHNIQUES; SEMICONDUCTOR QUANTUM WELLS;

ABSORPTION;

EID: 80655141824 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3656688 Document Type: Article

Times cited : (7)

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