SnGe asymmetric quantum well electroabsorption modulators for long-wave silicon photonics

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 16, Issue 1, 2010, Pages 100-105

  Moontragoon, Pairot ^a   Vukmirović, Nenad ^b   Ikonić, Zoran ^a   Harrison, Paul ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Electroabsorption (EA) modulator; Group IV semiconductors; Quantum wells (QWs); Quantum confined Stark effect

Indexed keywords

LASER APPLICATIONS; LIGHT TRANSMISSION; OPTOELECTRONIC DEVICES; QUANTUM WELL LASERS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; SI-GE ALLOYS; SILICON PHOTONICS; TIN ALLOYS;

ASYMMETRIC DOUBLE QUANTUM WELLS; ASYMMETRIC QUANTUM WELLS; GROUP-IV SEMICONDUCTORS; MID-INFRARED SPECTRAL RANGE; OPTOELECTRONIC APPLICATIONS; PROSPECTIVE APPLICATIONS; QUANTUM CONFINED STARK EFFECT; SI-BASED OPTOELECTRONICS;

ELECTROABSORPTION MODULATORS;

EID: 76949106521     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2026691     Document Type: Article

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