Direct gap related optical transitions in Ge/SiGe quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 6, 2009, Pages 972-975

  Bonfanti, M ^a   Grilli, E ^a   Guzzi, M ^a   Chrastina, D ^b   Isella, G ^b   von Kanel H ^b   Sigg, H ^c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

Absorption; Photocurrent; Quantum wells; SiGe

Indexed keywords

BAND ALIGNMENTS; CONDUCTION-BAND STATE; EXCITONIC TRANSITIONS; EXPERIMENTAL STUDIES; LOW-ENERGY PLASMAS; METAL-SEMICONDUCTOR-METAL CONTACTS; MULTIPLE QUANTUM WELLS; PHOTOCURRENT MEASUREMENTS; QUANTUM WELLS; SIGE; STRAIN-COMPENSATED; TRANSMISSION SPECTRUMS;

ABSORPTION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GERMANIUM; OPTICAL TRANSITIONS; PHOTOCURRENTS; PHOTODETECTORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; STRUCTURAL METALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 67349222962     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.08.052     Document Type: Article

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