Effects of substrate temperature on dielectric and structural properties of Ti and Er co-doped HfO 2 thin films

Vacuum

Volumn 86, Issue 12, 2012, Pages 1920-1923

  Khaskheli, Murad Ali ^a   Wu, Ping ^a   Li, Xianfei ^a   Wang, Hui ^a   Zhang, Shiping ^a   Chen, Sen ^a   Pei, Yili ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

Hafnium dioxide; HfTiErO x films; High k dielectric; Substrate temperatures

Indexed keywords

CO-DOPED; CO-DOPING; DIFFERENT SUBSTRATES; FLAT-BAND VOLTAGE; HAFNIUM DIOXIDE; HIGH-K DIELECTRIC; HYSTERESIS VOLTAGE; INTERFACE STATE DENSITY; K-VALUES; SUBSTRATE TEMPERATURE; XRD;

DEGRADATION; DIELECTRIC PROPERTIES; ERBIUM; HAFNIUM; HAFNIUM OXIDES; INTERFACE STATES; SUBSTRATES; THIN FILMS;

INTERFACES (MATERIALS);

EID: 84862987875     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2012.03.028     Document Type: Article

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