Influence of bias-induced copper diffusion on the resistive switching characteristics of a SiON thin film

Electrochemical and Solid-State Letters

Volumn 14, Issue 2, 2011, Pages

  Yang, Po Chun ^a   Chang, Ting Chang ^a,b   Chen, Shih Ching ^a   Lin, Yu Shih ^c   Huang, Hui Chun ^a   Gan, Der Shin ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER DIFFUSION; CU THIN FILM; ENDURANCE TEST; FORMING PROCESS; PULSE OPERATION; RESISTANCE STATE; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RETENTION CHARACTERISTICS;

PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; SWITCHING; SWITCHING SYSTEMS; ULTRATHIN FILMS;

COPPER;

EID: 78951481214     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3518701     Document Type: Article

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