Oxygen plasma and high pressure H2O vapor heat treatments used to fabricate polycrystalline silicon thin film transistors

Applied Physics A: Materials Science and Processing

Volumn 77, Issue 1, 2003, Pages 141-144

  Watakabe, H ^a   Sameshima, T ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTALLIZATION; EXCIMER LASERS; HEAT TREATMENT; HIGH PRESSURE EFFECTS; OXYGEN; PLASMA APPLICATIONS; POLYSILICON; PULSED LASER APPLICATIONS; THRESHOLD VOLTAGE; VAPORS; WATER;

EXCIMER LASER IRRADIATION; OXYGEN PLASMA TREATMENT; POLYCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 0038610575     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-002-2072-6     Document Type: Article

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