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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 828-833

Characterization of methyl-doped silicon oxide film deposited using Flowfill™ chemical vapor deposition technology

(7) Lu, Hongqiang a Cui, Hao a Bhat, Ishwara a Murarka, Shyam a Lanford, Williams b Hsia, Wei Jen c Li, Weidan c

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b STATE UNIVERSITY OF NEW YORK (United States)

c AGERE SYSTEMS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHEMICAL MECHANICAL POLISHING; COMPOSITION EFFECTS; DENSITY (SPECIFIC GRAVITY); HARDNESS; LEAKAGE CURRENTS; MOISTURE; NANOSTRUCTURED MATERIALS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; POLYMERS; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

INTERLAYER DIELECTRICS (ILD);

DIELECTRIC FILMS;

EID: 0035998545 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1470510 Document Type: Conference Paper

Times cited : (15)

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