Effect of water on SiOx films formed by plasma-enhanced chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 A, 2007, Pages 1404-1408

  Fukuda, Takuya ^a,b,c  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b Future Advanced Technology Research Laboratory Co Ltd   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

Dielectric constant; Electrolysis; Insulator; J E characteristics; P TEOS; SiOx; TDS; Vfb

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTROLYSIS; FILM GROWTH; LEAKAGE CURRENTS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; WATER;

APPLIED CURRENT; DESORPTION GASES; ELECTRICAL MEASUREMENTS;

SILICA;

EID: 34547911118     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.1404     Document Type: Article

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