Water absorption characteristics of fluorinated silicon oxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition using SiH4, SiF4 and O2

Thin Solid Films

Volumn 376, Issue 1-2, 2000, Pages 26-31

  Byun, Kyung Mun ^a   Lee, Won Jong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ELECTRON CYCLOTRON RESONANCE; FILM PREPARATION; FLUORINE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDRATION; MOLECULAR VIBRATIONS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; THIN FILMS; WATER ABSORPTION;

FLUORINATED SILICON OXIDE FILMS; HYGROSCOPY;

DIELECTRIC FILMS;

EID: 0034315599     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01206-2     Document Type: Article

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