Fully passivated AlInN/GaN HEMTs with fT/fMAX of 205/220 GHz

IEEE Electron Device Letters

Volumn 32, Issue 10, 2011, Pages 1364-1366

  Tirelli, Stefano ^a   Marti, Diego ^a   Sun, Haifeng ^a   Alt, Andreas R ^a   Carlin, Jean François ^b   Grandjean, Nicolas ^b   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

AlInN GaN; high electron mobility transistor (HEMT); surface depletion

Indexed keywords

ALINN/GAN; BIAS POINTS; CURRENT GAIN CUTOFF FREQUENCY; GATE ELECTRODES; MAXIMUM VALUES; SURFACE DEPLETION;

CUTOFF FREQUENCY; ELECTRON MOBILITY; PASSIVATION; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80053570815     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2162087     Document Type: Article

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