MBE-regrown ohmics in InAlN HEMTs with a regrowth interface resistance of 0.05 Ω̇mm

IEEE Electron Device Letters

Volumn 33, Issue 4, 2012, Pages 525-527

  Guo, Jia ^a   Li, Guowang ^a   Faria, Faiza ^a   Cao, Yu ^a   Wang, Ronghua ^a   Verma, Jai ^a   Gao, Xiang ^b   Guo, Shiping ^b   Beam, Edward ^c   Ketterson, Andrew ^c   Schuette, Michael ^c   Saunier, Paul ^c   Wistey, Mark ^a   Jena, Debdeep ^a   Xing, Huili ^a  

^a University of Notre Dame   (United States)

^b IQE INC   (United States)

^c TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

AlN; contact resistance; GaN; high electron mobility transistor (HEMT); InAlN; metal organic chemical vapor deposition (MOCVD); molecular beam epitaxy (MBE); regrowth; transistor

Indexed keywords

ALN; GAN; HIGH-ELECTRON MOBILITY TRANSISTOR (HEMT); INALN; MOLECULAR BEAM EPITAXY (MBE); REGROWTH;

CONTACT RESISTANCE; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84862824688     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2186116     Document Type: Article

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