Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts

IEEE Electron Device Letters

Volumn 33, Issue 5, 2012, Pages 661-663

  Li, Guowang ^a   Wang, Ronghua ^a   Guo, Jia ^a   Verma, Jai ^a   Hu, Zongyang ^a   Yue, Yuanzheng ^a   Faria, Faiza ^a   Cao, Yu ^b,c   Kelly, Michelle ^a   Kosel, Thomas ^a   Xing, Huili ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

^c KOPIN CORPORATION   (United States)

Author keywords

Aluminum nitride (AlN); Gallium nitride; Molecular beam epitaxy (MBE); Quantum well (QW); Transistor; Ultrathin body (UTB)

Indexed keywords

ALN; ALN BARRIERS; BINARY NITRIDES; C-V MEASUREMENT; DEVICE STRUCTURES; FUTURE GENERATIONS; HIGH FREQUENCY HF; HIGH POWER APPLICATIONS; HIGH QUALITY; LONG CHANNEL DEVICES; PEAK EXTRINSIC TRANSCONDUCTANCE; SATURATION DRAIN CURRENT; SHORT-CHANNEL EFFECT; SILICON ON INSULATOR; STRAIN-FREE; ULTRA-THIN; ULTRATHIN BODY;

ALUMINUM NITRIDE; ELECTRIC CONTACTORS; EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTOR QUANTUM WELLS; TRANSISTORS;

GALLIUM NITRIDE;

EID: 84862798739     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2186628     Document Type: Article

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