Delay time analysis of submicron InP-based HEMT's

IEEE Transactions on Electron Devices

Volumn 43, Issue 2, 1996, Pages 228-237

  Kwon, Youngwoo ^a   Pavlidis, Dimitris ^b  

^a ROCKWELL SCIENCE CENTER   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; DELAY CIRCUITS; ELECTRONS; GATES (TRANSISTOR); MODULATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MONTE CARLO METHODS; SEMICONDUCTING INDIUM PHOSPHIDE; VELOCITY;

DELAY TIME ANALYSIS; ELECTRON VELOCITY; TRANSIT TIME; TWO DIMENSIONAL ENSEMBLE MONTE CARLO SIMULATION; VELOCITY MODULATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030086386     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.481722     Document Type: Article

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