245-GHz InAlN/GaN HEMTs with oxygen plasma treatment

IEEE Electron Device Letters

Volumn 32, Issue 6, 2011, Pages 755-757

  Lee, Dong Seup ^a   Chung, Jinwook W ^a   Wang, Han ^a   Gao, Xiang ^b   Guo, Shiping ^b   Fay, Patrick ^c   Palacios, Toms ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b IQE INC   (United States)

^c University of Notre Dame   (United States)

Author keywords

AlN; current gain cutoff frequency (f T); GaN; high electron mobility transistor (HEMT); InAlN; oxygen plasma; transconductance (gm)

Indexed keywords

ALN; CURRENT GAIN CUTOFF FREQUENCY; GAN; INALN; OXYGEN PLASMA;

CUTOFF FREQUENCY; ELECTRON MOBILITY; GALLIUM NITRIDE; LEAKAGE CURRENTS; OXYGEN; PLASMA APPLICATIONS; SILICON CARBIDE; TRANSCONDUCTANCE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79957611892     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2132751     Document Type: Article

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