Si-containing recessed ohmic contacts and 210GHz quaternary barrier InAlGaN high-electron-mobility transistors

Applied Physics Express

Volumn 4, Issue 9, 2011, Pages

  Wang, Ronghua ^a   Li, Guowang ^a   Verma, Jai ^a   Zimmermann, Tom ^a   Hu, Zongyang ^a   Laboutin, Oleg ^b   Cao, Yu ^b   Johnson, Wayne ^b   Gao, Xiang ^c   Guo, Shiping ^c   Snider, Gregory ^a   Fay, Patrick ^a   Jena, Debdeep ^a   Xing, Huili ^a  

^a University of Notre Dame   (United States)

^b KOPIN CORPORATION   (United States)

^c IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAINS; CUT-OFF; INALGAN; MAXIMUM DRAIN CURRENT; OHMIC METALS; PEAK EXTRINSIC TRANSCONDUCTANCE; QUATERNARY BARRIERS;

DRAIN CURRENT; ELECTRIC CONTACTORS; GALLIUM; OHMIC CONTACTS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80052606180     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.096502     Document Type: Article

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