Effects of sputtering pressure and Al buffer layer thickness on properties of AZO films grown by rf magnetron sputtering

Vacuum

Volumn 85, Issue 2, 2010, Pages 263-267

  Tseng, C H ^a   Wang, W H ^b   Chang, H C ^b   Chou, C P ^a   Hsu, C Y ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b LUNGHWA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Al buffer layer; Electrical resistivity; Rf magnetron sputtering; Transparent conductive oxide

Indexed keywords

AL BUFFER LAYER; ARGON SPUTTERING; AZO FILMS; BUFFER LAYER THICKNESS; DIFFRACTION PEAKS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL RESISTIVITY; OPTICAL TRANSMITTANCE; PREFERRED ORIENTATIONS; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SODA LIME GLASS SUBSTRATE; SPUTTERING PRESSURES; TRANSPARENT CONDUCTIVE OXIDES; WURTZITE STRUCTURE; ZNO;

ALUMINUM; ARGON; BUFFER LAYERS; CONDUCTIVE FILMS; ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; OXIDE FILMS; SUBSTRATES; ZINC; ZINC OXIDE; ZINC SULFIDE;

OPTICAL FILMS;

EID: 77956613199     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2010.06.006     Document Type: Article

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