X-ray photoelectron spectroscopy study and thermoelectric properties of Al-doped ZnO thin films

Journal of Electron Spectroscopy and Related Phenomena

Volumn 173, Issue 1, 2009, Pages 7-11

  Li, Li ^a   Fang, Liang ^b   Zhou, Xian Ju ^a   Liu, Zi Yi ^a   Zhao, Liang ^a   Jiang, Sha ^a  

^a CHONGQING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b CHONGQING UNIVERSITY   (China)

Author keywords

Al doped ZnO (AZO) thin films; Thermoelectric power; Thermoelectromotive force; XPS spectra

Indexed keywords

ADSORBED OXYGEN; AL-DOPED ZNO; AL-DOPED ZNO (AZO) THIN FILMS; ANNEALING TREATMENTS; AZO THIN FILMS; DIRECT CURRENT; ELECTRICAL RESISTANCES; EXTERNAL MAGNETIC FIELD; HIGH QUALITY; OXIDIZED STATE; REACTIVE MAGNETRON SPUTTERING; ROOM TEMPERATURE; TEMPERATURE DIFFERENCES; THERMOELECTRIC EFFECTS; THERMOELECTRIC MEASUREMENTS; THERMOELECTRIC PROPERTIES; THERMOELECTROMOTIVE FORCE; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES; XPS; XPS SPECTRA;

ALUMINUM; ELECTRIC CONDUCTIVITY OF GASES; ELECTRON SPECTROSCOPY; MAGNETIC FIELDS; OXYGEN; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SEMICONDUCTING ZINC COMPOUNDS; SPECTRUM ANALYSIS; THERMOELECTRIC EQUIPMENT; THERMOELECTRIC POWER; THIN FILMS; ZINC; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67349160953     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elspec.2009.03.001     Document Type: Article

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