The effect of annealing and ZnO dopant on the optoelectronic properties of ITO thin films

Journal of Physics D: Applied Physics

Volumn 40, Issue 14, 2007, Pages 4234-4240

  Mohamed, H A ^a  

^a Sohag University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GRAIN SIZE AND SHAPE; INDIUM COMPOUNDS; LIGHT TRANSMISSION; OPTICAL PROPERTIES; ZINC OXIDE;

ELECTRON-BEAM EVAPORATION; FILM CRYSTALLINITY; INDIUM TIN OXIDE; MOBILITY CARRIERS;

THIN FILMS;

EID: 34547284146     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/14/019     Document Type: Article

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