Low equivalent oxide thickness TiO2 based capacitors for DRAM application

ECS Transactions

Volumn 41, Issue 2, 2011, Pages 73-77

  Frohlich K ^a   Hudec, B ^a   Husekova K ^a   Aarik, J ^b   Tarre, A ^b   Kasikov, A ^b   Rammula, R ^b   Vincze, A ^c  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b UNIVERSITY OF TARTU   (Estonia)

^c INTERNATIONAL LASER CENTER   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CURRENT DENSITY; LEAKAGE CURRENTS; OXIDE MINERALS; PERMITTIVITY; SEMICONDUCTOR DOPING; TITANIUM DIOXIDE;

AL DOPED; AL-DOPING; DIELECTRIC CONSTANT VALUES; DRAM CAPACITOR; EQUIVALENT OXIDE THICKNESS; POST-DEPOSITION; TIO2 FILM;

HIGH-K DIELECTRIC;

EID: 84857282329     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3633656     Document Type: Conference Paper

References (8)

1. S. K. Kim, W.-D. Kim, K.-M. Kim, C. S. Hwang, and J. Jeong, Appl. Phys. Lett., 85, 4112 (2004).
2. K. Fröhlich, M. Ťapajna, A. Rosová, E. Dobročka, K. Hušeková, J. Aarik, and A. Aidla, Electrochem. Solid-State Lett., 11, G19 (2008).
3. S. K. Kim, S. W. Lee, J. H. Han, B. Lee, S. Han, and C. S. Hwang, Adv. Funct. Mater., 20, 2989 (2010)
4. B. Hudec, K. Hušeková, A. Tarre, J. H. Han, S. Han, A. Rosová, W. Lee, A. Kasikov, S. J. Song, J. Aarik, C. S. Hwang, K. Fröhlich, Microelectronic Eng., 88, 1514 (2011).
5. S. K. Kim, G.-J. Choi, S. Y. Lee, M. Seo, S. W. Lee, J. H. Han, H.-S. Ahn, S. Han, and C. S. Hwang, Adv. Mater., 20, 1429 (2008).
6. P. Knauth, and H. L. Tuller, J. Appl. Phys., 85, 897 (1999).
7. K. Fröhlich, B. Hudec, J. Aarik, A. Tarre, D. Machajdík, A. Kasikov, K. Hušeková, and Š. Gaži, Microelectronic Eng., 88, 1525 (2011).
8. B. Hudec, K. Hušeková, E. Dobročka, J. Aarik, R. Rammula, A. Kasikov, A. Tarre, A. Vincze, and K. Fröhlich, J. Vac. Sci. Technol., 01AC09-1, B 29 (2011).