Photovoltaic properties of GaAsP core-shell nanowires on Si(001) substrate

Nanotechnology

Volumn 23, Issue 26, 2012, Pages

  Tchernycheva, M ^a   Rigutti, L ^a,f   Jacopin, G ^a   De Luna Bugallo, A ^a   Lavenus, P ^a   Julien, F H ^a   Timofeeva, M ^a,b   Bouravleuv, A D ^b,c,d   Cirlin, G E ^b,c   Dhaka, V ^d   Lipsanen, H ^d   Largeau, L ^e  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d AALTO UNIVERSITY   (Finland)

^e UNIV PARIS SUD   (France)

^f UNIVERSITÉ DE ROUEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; CHARGE COLLECTION; CORE-SHELL NANOWIRES; CUBIC STRUCTURE; ELECTRO-OPTICAL STUDIES; ELECTRONIC BEAMS; GAAS; HIGHLY SENSITIVE; LOW DENSITY; MICROSCOPY TECHNIQUE; OPTICAL BEAM INDUCED CURRENTS; P-N JUNCTION; PHOTO-VOLTAGE; PHOTOVOLTAIC DEVICES; PHOTOVOLTAIC PROPERTY; SI (001) SUBSTRATE; SPATIALLY RESOLVED; STEM ANALYSIS; STRONG SIGNAL; SUBMILLIMETERS; TWO-STEP PROCEDURE;

GALLIUM ARSENIDE; INTERFACES (MATERIALS); PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM; SILICON; SUBSTRATES; WIRE;

NANOWIRES;

EID: 84862673262     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/26/265402     Document Type: Article

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