Numerical model of current-voltage characteristics and efficiency of GaAs nanowire solar cells

Journal of Applied Physics

Volumn 109, Issue 3, 2011, Pages

  Lapierre, R R ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CELL PERFORMANCE; CORE-SHELL; CURRENT VOLTAGE; DEPLETION EFFECTS; DETAILED BALANCE; DOPING CONCENTRATION; ELECTRICAL CONTACTS; FERMI LEVEL PINNING; GAAS; J-V CHARACTERISTICS; METAL/SEMICONDUCTOR INTERFACE; NUMERICAL MODELS; NUMERICAL SIMULATION; PHOTOCONVERSION EFFICIENCY; PN JUNCTION DIODES; SIDEWALL PASSIVATION; SOLAR CELL EFFICIENCIES; SOLAR CELL PERFORMANCE; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS;

ELECTRIC WIRE; NANOWIRES; PASSIVATION; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79951834258     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3544486     Document Type: Article

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