Multifunctional devices and logic gates with undoped silicon nanowires

Nano Letters

Volumn 12, Issue 6, 2012, Pages 3074-3079

  Mongillo, Massimo ^a,b   Spathis, Panayotis ^a,c   Katsaros, Georgios ^a   Gentile, Pascal ^a   De Franceschi, Silvano ^a  

^a UNIV GRENOBLE ALPES   (France)

^b IMEP LAHC   (France)

^c CNRS   (France)

Author keywords

logic gates; Nanoelectronics; Schottky barrier; semiconductor nanowires; silicon transistors

Indexed keywords

CARRIER INJECTION; CONTACT INTERFACE; ELECTRONIC TRANSPORT PROPERTIES; LIQUID HELIUM TEMPERATURE; MULTIFUNCTIONAL DEVICES; MULTIPLE GATES; NANOWIRE DEVICES; P-N DIODE; RECONFIGURABLE DEVICES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIER TRANSISTORS; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SEMICONDUCTOR NANOWIRE; SILICON CHANNEL; SILICON TRANSISTORS; TEMPERATURE-DEPENDENT MEASUREMENTS; TRANSPORT MECHANISM; TUNABLE POLARITIES; UNDOPED SILICON; WRAP GATE;

LIQUEFIED GASES; LOGIC GATES; NANOELECTRONICS; NANOWIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICIDES; SUPERFLUID HELIUM; TRANSISTORS; TRANSPORT PROPERTIES;

SEMICONDUCTING SILICON;

NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; NANOTECHNOLOGY; SEMICONDUCTOR; SIGNAL PROCESSING; ULTRASTRUCTURE;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; NANOSTRUCTURES; NANOTECHNOLOGY; SEMICONDUCTORS; SIGNAL PROCESSING, COMPUTER-ASSISTED; SILICON; TRANSISTORS, ELECTRONIC;

EID: 84862303852     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl300930m     Document Type: Article

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