Temperature dependence of carrier transport of a silicon nanowire schottky-barrier field-effect transistor

IEEE Transactions on Nanotechnology

Volumn 7, Issue 6, 2008, Pages 728-732

  Yang, W F ^a   Lee, S J ^a   Liang, G C ^a   Eswar, R ^a   Sun, Z Q ^a   Kwong, D L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Barrier height; Carrier injection; Schottky barrier (SB) MOSFET; Silicon nanowire (SiNW); Temperature dependence

Indexed keywords

CIVIL AVIATION; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; NANOWIRES; PALLADIUM; SCHOTTKY BARRIER DIODES; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION; TITANIUM; TRANSISTORS;

BARRIER HEIGHT; CARRIER INJECTION; SCHOTTKY-BARRIER (SB) MOSFET; SILICON NANOWIRE (SINW); TEMPERATURE DEPENDENCE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 58149214099     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.2003353     Document Type: Article

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