Direct measurements of lateral variations of Schottky barrier height across "end-On" metal contacts to vertical Si nanowires by ballistic electron emission microscopy

Nano Letters

Volumn 12, Issue 2, 2012, Pages 694-698

  Cai, Wei ^a   Che, Yulu ^a   Pelz, Jonathan P ^a   Hemesath, Eric R ^b   Lauhon, Lincoln J ^b  

^a OHIO STATE UNIVERSITY   (United States)

^b Northwestern University   (United States)

Author keywords

"end on" contact; interface states; nm resolution measurement; Schottky barrier; Si nanowire

Indexed keywords

AU FILM; BALLISTIC ELECTRON EMISSION MICROSCOPY; BANDBENDING; CONTACT CENTERS; CONTACT EDGES; DIRECT MEASUREMENT; ELECTROSTATIC SIMULATIONS; FINITE-ELEMENT; HIGH WORK FUNCTION; INTERFACE STATE; LATERAL VARIATIONS; METAL CONTACTS; NM RESOLUTION; POSITIVE CHARGES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SI NANOWIRE;

BALLISTICS; ELECTRIC FIELDS; ELECTRON EMISSION; GOLD; INTERFACE STATES; NANOWIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICON;

INTERFACES (MATERIALS);

GOLD; NANOWIRE; SILICON; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; PARTICLE SIZE; SCANNING ELECTRON MICROSCOPY; STATIC ELECTRICITY; SURFACE PROPERTY;

GOLD; MICROSCOPY, ELECTRON, SCANNING; NANOWIRES; PARTICLE SIZE; SILICON; SILICON DIOXIDE; STATIC ELECTRICITY; SURFACE PROPERTIES;

EID: 84856951887     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl203568c     Document Type: Article

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