In situ TEM creation and electrical characterization of nanowire devices

Nano Letters

Volumn 12, Issue 6, 2012, Pages 2965-2970

  Kallesøe, Christian ^a,d   Wen, Cheng Yen ^b   Booth, Timothy J ^a   Hansen, Ole ^a   Bøggild, Peter ^a   Ross, Frances M ^c   Mølhave, Kristian ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b PURDUE UNIVERSITY   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d DANISH TECHNOLOGICAL INSTITUTE   (Denmark)

Author keywords

cantilever; CVD; nanowire transport; Si nanowire growth; TEM; UHV transmission electron microscopy

Indexed keywords

CANTILEVER; DIRECT ANALYSIS; ELECTRICAL CHARACTERIZATION; ELECTRICAL CURRENT; ELECTRICAL PARAMETER; FAILURE CHARACTERISTICS; HIGH CURRENTS; IN-SITU; IN-SITU TEM; NANO SCALE; NANOSCALE DEVICE; NANOWIRE DEVICES; NANOWIRE SURFACE; OBSERVATION AND MEASUREMENT; SI NANOWIRE; TRANSMISSION ELECTRON MICROSCOPE; VAPOR-LIQUID-SOLID METHODS;

CHEMICAL VAPOR DEPOSITION; NANOCANTILEVERS; NANOTECHNOLOGY; NANOWIRES; SILICON; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

ELECTRIC PROPERTIES;

NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; TRANSMISSION ELECTRON MICROSCOPY; ULTRASTRUCTURE;

ELECTRIC CONDUCTIVITY; MATERIALS TESTING; MICROSCOPY, ELECTRON, TRANSMISSION; NANOSTRUCTURES; PARTICLE SIZE; SILICON;

EID: 84862270078     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl300704u     Document Type: Article

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