Epitaxial integration of nanowires in microsystems by local micrometer-scale vapor-phase epitaxy

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Volumn 4, Issue 10, 2008, Pages 1741-1746

  Mølhave, Kristian ^a   Wacaser, Brent A ^b   Petersen, Dirch Hjorth ^a   Wagner, Jakob B ^b   Samuelson, Lars ^b   Bøggild, Peter ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b LUND UNIVERSITY   (Sweden)

Author keywords

Chemical vapor deposition; Epitaxy; Nanowires; Silicon

Indexed keywords

CONTAMINATION; CRYSTAL GROWTH; ELECTRIC WIRE; EPITAXIAL GROWTH; GALLIUM NITRIDE; HEATING; METALLORGANIC VAPOR PHASE EPITAXY; MICROFABRICATION; MICROSYSTEMS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; ORGANOMETALLICS; PHASE INTERFACES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

COMPATIBILITY PROBLEMS; CONTROLLED GROWTHS; EPITAXIALLY GROWN; EPITAXY; GROWTH OF GAN; LOCAL GROWTHS; METAL ORGANIC; MICROFABRICATION PROCESSES; NANOWIRE DEVICES; OPTICAL-; RAPID OPTIMIZATIONS; SAMPLE PREPARATIONS; SEMICONDUCTING NANOWIRES; SILICON NANOWIRES; SYNTHESIS TEMPERATURES; TRANSMISSION ELECTRON MICROSCOPES;

CHEMICAL VAPOR DEPOSITION;

NANOWIRE; SILICON;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRICITY; GAS; METHODOLOGY; NANOTECHNOLOGY; TEMPERATURE; ULTRASTRUCTURE; VOLATILIZATION;

CRYSTALLIZATION; ELECTRICITY; GASES; NANOTECHNOLOGY; NANOWIRES; SILICON; TEMPERATURE; VOLATILIZATION;

EID: 55349126428     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200800366     Document Type: Article

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